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HD64F3337YCP16V Datasheet, PDF (524/749 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents | |||
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Table 20.18 DC Characteristics of Flash Memory
Conditions: VCC = 2.7 V to 5.5 V*2, AVCC = 2.7 V to 5.5 V*2,VSS = AVSS = 0 V,
VPP = 12.0 ± 0.6 V, Ta = â20°C to +75°C (regular specifications), Ta = â40°C to
+85°C (wide-range specifications)
Item
Symbol Min
Typ Max Unit Test Conditions
High-voltage
FVPP, MD1
VH
(12 V) threshold
level*1
VCC + 2 â
11.4 V
FVPP current
During read IPP
During
programming
â
â
10
µA VPP = 2.7 to 5.5 V
â
10
20
mA VPP = 12.6 V
â
20
40
mA
During
erasure
â
20
40
mA
Notes: *1 The listed voltages indicate the threshold level at which high-voltage application is
recognized. In boot mode and while flash memory is being programmed or erased, the
applied voltage should be 12.0 V ± 0.6 V.
*2 In the LH version, VCC = 3.0 V to 5.5 V, AVCC = 3.0 V to 5.5 V
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