HD64F3337YCP16V Datasheet, PDF (512/749 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

High-Speed, High-Reliability Programming: Unused areas of the H8/3337YF flash memory
contain H'FF data (initial value). The H8/3337YF flash memory uses a high-speed, high-reliability
programming procedure. This procedure provides enhanced programming speed without
subjecting the device to voltage stress and without sacrificing the reliability of programmed data.
Figure 20.15 shows the basic high-speed, high-reliability programming flowchart. Tables 20.15
and 20.16 list the electrical characteristics during programming.
Start
Set V_PP = 12.0 V ±0.6 V
Address = 0
n=0
n+1→n
Program setup command
Program command
Wait (25 µs)
Program-verify command
Address + 1 → address
Wait (6 µs)
Verification?
No go
Go
No
Last address?
Yes
Set V_PP = V_CC
No
n = 20?
Yes
End
Fail
Figure 20.15 High-Speed, High-Reliability Programming
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