HD64F3337YCP16V Datasheet, PDF (559/749 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Memory Read Mode
1. After completion of auto-program/auto-erase/status read operations, a transition is made to the
command wait state. When reading memory contents, a transition to memory read mode must
first be made with a command write, after which the memory contents are read.
2. In memory read mode, command writes can be performed in the same way as in the command
wait state.
3. Once memory read mode has been entered, consecutive reads can be performed.
4. After powering up, memory read mode is entered.
Table 21.13 AC Characteristics in Memory Read Mode
(Conditions: V_CC = 5.0 V ±10%, V_SS = 0 V, T_a = 25°C ±5°C)
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Programming pulse width
WE rise time
WE fall time
Symbol
t _nxtc
t _ceh
t _ces
t _dh
t _ds
t _wep
t_r
t_f
Min
20
0
0
50
50
70
Max
Unit
µs
ns
ns
ns
ns
ns
30
ns
30
ns
Notes
Address
CE
OE
WE
Data
Command write
t_ces
t_ceh
t_wep
t_f
t_r
t_nxtc
t_ds
t_dh
Data
Memory read mode
Address stable
Data
Note: Data is latched at the rising edge of WE.
Figure 21.16 Timing Waveforms for Memory Read after Command Write
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