HD64F3337YCP16V Datasheet, PDF (536/749 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

21.2 Flash Memory Register Descriptions
21.2.1 Flash Memory Control Register 1 (FLMCR1)
Bit
7
6
5
FWE SWE
—
Initial value
1
0
0
Read/Write
R
R/W
—
4
3
2
1
0
—
EV
PV
E
P
0
0
0
0
0
—
R/W
R/W
R/W
R/W
Note: The FLSHE bit in WSCR must be set to 1 in order for this register to be accessed.
FLMCR1 is an 8-bit register that controls the flash memory operating modes. Program-verify
mode or erase-verify mode is entered by setting SWE to 1. Program mode is entered by setting
SWE to 1 when FWE = 1, then setting the PSU bit in FLMCR2, and finally setting the P bit. Erase
mode is entered by setting SWE to 1, then setting the ESU bit in FLMCR2, and finally setting the
E bit. FLMCR1 is initialized to H'80 by a reset, and in hardware standby mode and software
standby mode. When on-chip flash memory is disabled, a read will return H'00, and writes are
invalid.
Writes to bits EV and PV in FLMCR1 are enabled only when SWE = 1; writes to the E bit only
when FWE = 1, SWE = 1, and ESU = 1; and writes to the P bit only when SWE = 1 and PSU = 1.
Bit 7—Flash Write Enable (FWE): Controls programming and erasing of on-chip flash memory.
In the H8/3337SF, this bit cannot be modified and is always read as 1.
Bit 6—Software Write Enable (SWE): Enables or disables the flash memory. This bit should be
set before setting bits ESU, PSU, EV, PV, E, P, and EB7 to EB0, and should not be cleared at the
same time as these bits.
Bit 6: SWE
0
1
Description
Writes disabled
Writes enabled
(Initial value)
Bits 6 to 4—Reserved: These bits cannot be modified and are always read as 0.
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