HD64F3337YCP16V Datasheet, PDF (568/749 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

21.6 Flash Memory Programming and Erasing Precautions
Read these precautions before using writer mode, on-board programming mode, or flash memory
emulation by RAM.
(1) Program with the specified voltage and timing.
When using a PROM programmer to reprogram the on-chip flash memory in the single-power-
supply model (S-mask model), use a PROM programmer that supports the Hitachi microcomputer
device type with 64-kbyte on-chip flash memory (5.0 V programming voltage), do not set the
programmer to the HN28F101 3.3 V programming voltage and only use the specified socket
adapter. Failure to observe these precautions may result in damage to the device.
(2) Before programming, check that the chip is correctly mounted in the PROM
programmer.
Overcurrent damage to the device can occur if the index marks on the PROM programmer socket,
socket adapter, and chip are not correctly aligned.
(3) Don’t touch the socket adapter or chip while programming.
Touching either of these can cause contact faults and write errors.
(4) Set H'FF as the PROM programmer buffer data for addresses H'F780 to H'1FFFF.
The H8/3337SF PROM size is 60 kbytes. Addresses H'F780 to H'1FFFF always read H'FF, so if
H'FF is not specified as programmer data, a block error will occur.
(5) Use the recommended algorithms for programming and erasing flash memory.
These algorithms are designed to program and erase without subjecting the device to voltage stress
and without sacrificing the reliability of programmed data.
Before setting the program (P) or erase (E) bit in flash memory control register 1 (FLMCR1), set
the watchdog timer to ensure that the P or E bit does not remain set for more than the specified
time.
(6) For details on interrupt handling while flash memory is being programmed or erased,
see section 21.4.6, Interrupt Handling during Flash Memory Programming and Erasing.
(7) Cautions on Accessing Flash Memory Control Registers
1. Flash memory control register access state in each operating mode
The H8/3337SF has flash memory control registers located at addresses H'FF80 (FLMCR1),
H'FF81 (FLMCR2), and H'FF83 (EBR2). These registers can only be accessed when the
FLSHE bit is set to 1 in the wait-state control register (WSCR).
Table 21.22 shows the area accessed for the above addresses in each mode, when FLSHE = 0
and when FLSHE = 1.
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