HD64F3337YCP16V Datasheet, PDF (464/749 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Table 19.18 DC Characteristics of Flash Memory
Conditions: V_CC = 2.7 V to 5.5 V^*2, AV_CC = 2.7 V to 5.5 V^*2,V_SS = AV_SS = 0 V,
V_PP = 12.0 ± 0.6 V, T_a = –20°C to +75°C (regular specifications), T_a = –40°C to
+85°C (wide-range specifications)
Item
Symbol Min
Typ Max Unit Test Conditions
High-voltage (12 V) FV_PP, MD₁
V_H
threshold level^*1
V_CC + 2 —
11.4 V
FV_PP current
During read I_PP
—
— 10
µA V_PP = 2.7 to 5.5 V
—
10 20
mA V_PP = 12.6 V
During
—
20 40
mA
programming
During erasure
—
20 40
mA
Notes: *1 The listed voltages indicate the threshold level at which high-voltage application is
recognized. In boot mode and while flash memory is being programmed or erased, the
applied voltage should be 12.0 V ± 0.6 V.
*2 In the LH version, V_CC = 3.0 V to 5.5 V, AV_CC = 3.0 V to 5.5 V
Table 19.19 AC Characteristics of Flash Memory
Conditions: V_CC = 2.7 V to 5.5 V^*5, AV_CC = 2.7 V to 5.5 V^*5, V_SS = AV_SS = 0 V,
V_PP = 12.0 ± 0.6 V, T_a = –20°C to +75°C (regular specifications), T_a = –40°C to
+85°C (wide-range specifications)
Item
Symbol Min Typ Max Unit Test Conditions
Programming time^{*1, *2}
Erase time^{*1, *3}
t_P
—
50
1000 µs
t_E
—
1
30
s
Number of writing/erasing count
Verify setup time 1^*1
Verify setup time 2^*1
Flash memory read setup time^*4
N_WEC
t _VS1
t _VS2
t _FRS
—
—
100 Times
4
—
—
µs
2
—
—
µs
50
—
—
µs
V_CC ≥ 4.5 V
100 —
—
V_CC < 4.5 V
Notes: *1 Set the times following the programming/erasing algorithm shown in section 19.
*2 The programming time is the time during which a byte is programmed or the P bit in the
flash memory control register (FLMCR) is set. It does not include the program-verify
time.
*3 The erase time is the time during which all 32-kbyte blocks are erased or the E bit in the
flash memory control register (FLMCR) is set. It does not include the prewrite time
before erasure or erase-verify time.
*4 After power-on when using an external clock source, after return from standby mode, or
after switching the programming voltage (V_PP) from 12 V to V_CC, make sure that this read
setup time has elapsed before reading flash memory.
When V_PP is released, the flash memory read setup time is defined as the period from
when the FV_PP pin has reached V_CC + 2 V until flash memory can be read.
*5 In the LH version, V_CC = 3.0 V to 5.5 V, AV_CC = 3.0 V to 5.5 V.
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