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| PIC18F23K22 Datasheet, PDF (421/492 Pages) Microchip Technology – 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology | |||
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PIC18(L)F2X/4XK22
27.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (â )
Ambient temperature under bias.............................................................................................................-40°C to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to VSS (except VDD, and MCLR) .................................................. -0.3V to (VDD + 0.3V)
Voltage on VDD with respect to VSS
PIC18LF46K22 ......................................................................................................... -0.3V to +4.5V
PIC18F46K22 ........................................................................................................... -0.3V to +6.5V
Voltage on MCLR with respect to VSS (Note 2) ............................................................................................0V to +11.0V
Total power dissipation (Note 1) ...............................................................................................................................1.0W
Maximum current out of VSS pin (-40°C to +85°C) .............................................................................................. 300 mA
Maximum current out of VSS pin (+85°C to +125°C)............................................................................................ 125 mA
Maximum current into VDD pin (-40°C to +85°C) ................................................................................................ 200 mA
Maximum current into VDD pin (+85°C to +125°C) ................................................................................................85 mA
Input clamp current, IIK (VI < 0 or VI > VDD)ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï® ï±20 mA
Output clamp current, IOK (VO < 0 or VO > VDD) ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï®ï® ï±20 mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk byï all ports (-40°C to +85°C)........................................................................................... 200 mA
Maximum current sunk byï all ports (+85°C to +125°C)......................................................................................... 110 mA
Maximum current sourced by all ports (-40°C to +85°C) ......................................................................................185 mA
Maximum current sourced by all ports (+85°C to +125°C) .....................................................................................70 mA
Note 1: Power dissipation is calculated as follows:
Pdis = VDD x {IDD â ï¥ IOH} + ï¥ {(VDD â VOH) x IOH} + ï¥(VOL x IOL)
2: Voltage spikes below VSS at the MCLR/VPP/RE3 pin, inducing currents greater than 80 mA, may cause
latch-up. Thus, a series resistor of 50-100ï should be used when applying a âlowâ level to the MCLR/VPP/
RE3 pin, rather than pulling this pin directly to VSS.
â NOTICE: Stresses above those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
ï£ 2010 Microchip Technology Inc.
Preliminary
DS41412B-page 421
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