PIC18F23K22 Datasheet, PDF (107/492 Pages) Microchip Technology – 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology

PIC18(L)F2X/4XK22
7.3 Reading the Data EEPROM
Memory
To read a data memory location, the user must write the
address to the EEADR register, clear the EEPGD con-
trol bit of the EECON1 register and then set control bit,
RD. The data is available on the very next instruction
cycle; therefore, the EEDATA register can be read by
the next instruction. EEDATA will hold this value until
another read operation, or until it is written to by the
user (during a write operation).
The basic process is shown in Example 7-1.
7.4 Writing to the Data EEPROM
Memory
To write an EEPROM data location, the address must
first be written to the EEADR register and the data writ-
ten to the EEDATA register. The sequence in
Example 7-2 must be followed to initiate the write cycle.
The write will not begin if this sequence is not exactly
followed (write 55h to EECON2, write 0AAh to
EECON2, then set WR bit) for each byte. It is strongly
recommended that interrupts be disabled during this
code segment.
Additionally, the WREN bit in EECON1 must be set to
enable writes. This mechanism prevents accidental
writes to data EEPROM due to unexpected code
execution (i.e., runaway programs). The WREN bit
should be kept clear at all times, except when updating
the EEPROM. The WREN bit is not cleared by
hardware.
After a write sequence has been initiated, EECON1,
EEADR and EEDATA cannot be modified. The WR bit
will be inhibited from being set unless the WREN bit is
set. Both WR and WREN cannot be set with the same
instruction.
At the completion of the write cycle, the WR bit is
cleared by hardware and the EEPROM Interrupt Flag
bit, EEIF, is set. The user may either enable this
interrupt or poll this bit. EEIF must be cleared by
software.
7.5 Write Verify
Depending on the application, good programming
practice may dictate that the value written to the
memory should be verified against the original value.
This should be used in applications where excessive
writes can stress bits near the specification limit.
EXAMPLE 7-1: DATA EEPROM READ
MOVLW
MOVWF
BCF
BCF
BSF
MOVF
DATA_EE_ADDR
EEADR
EECON1, EEPGD
EECON1, CFGS
EECON1, RD
EEDATA, W
;
; Data Memory Address to read
; Point to DATA memory
; Access EEPROM
; EEPROM Read
; W = EEDATA
EXAMPLE 7-2: DATA EEPROM WRITE
Required
Sequence
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
BCF
BCF
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
DATA_EE_ADDR_LOW
EEADR
DATA_EE_ADDR_HI
EEADRH
DATA_EE_DATA
EEDATA
EECON1, EEPGD
EECON1, CFGS
EECON1, WREN
INTCON, GIE
55h
EECON2
0AAh
EECON2
EECON1, WR
INTCON, GIE
;
; Data Memory Address to write
;
;
;
; Data Memory Value to write
; Point to DATA memory
; Access EEPROM
; Enable writes
; Disable Interrupts
;
; Write 55h
;
; Write 0AAh
; Set WR bit to begin write
; Enable Interrupts
BCF
EECON1, WREN
; User code execution
; Disable writes on write complete (EEIF set)
 2010 Microchip Technology Inc.
Preliminary
DS41412B-page 107