PIC18F23K22 Datasheet, PDF (108/492 Pages) Microchip Technology – 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology

PIC18(L)F2X/4XK22
7.6 Operation During Code-Protect
Data EEPROM memory has its own code-protect bits in
Configuration Words. External read and write
operations are disabled if code protection is enabled.
The microcontroller itself can both read and write to the
internal data EEPROM, regardless of the state of the
code-protect Configuration bit. Refer to Section 24.0
“Special Features of the CPU” for additional
information.
7.7 Protection Against Spurious Write
There are conditions when the user may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been implemented. On power-up, the WREN bit is
cleared. In addition, writes to the EEPROM are blocked
during the Power-up Timer period (TPWRT).
The write initiate sequence and the WREN bit together
help prevent an accidental write during brown-out,
power glitch or software malfunction.
7.8 Using the Data EEPROM
The data EEPROM is a high-endurance, byte
addressable array that has been optimized for the
storage of frequently changing information (e.g.,
program variables or other data that are updated often).
When variables in one section change frequently, while
variables in another section do not change, it is possible
to exceed the total number of write cycles to the
EEPROM without exceeding the total number of write
cycles to a single byte. Refer to the Data EEPROM
Memory parameters in Section 27.0 “Electrical
Characteristics” for write cycle limits. If this is the case,
then an array refresh must be performed. For this
reason, variables that change infrequently (such as
constants, IDs, calibration, etc.) should be stored in
Flash program memory.
A simple data EEPROM refresh routine is shown in
Example 7-3.
Note:
If data EEPROM is only used to store
constants and/or data that changes rarely,
an array refresh is likely not required. See
specification.
EXAMPLE 7-3:
Loop
CLRF
BCF
BCF
BCF
BSF
BSF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BTFSC
BRA
INCFSZ
BRA
BCF
BSF
DATA EEPROM REFRESH ROUTINE
EEADR
EECON1, CFGS
EECON1, EEPGD
INTCON, GIE
EECON1, WREN
EECON1, RD
55h
EECON2
0AAh
EECON2
EECON1, WR
EECON1, WR
$-2
EEADR, F
LOOP
; Start at address 0
; Set for memory
; Set for Data EEPROM
; Disable interrupts
; Enable writes
; Loop to refresh array
; Read current address
;
; Write 55h
;
; Write 0AAh
; Set WR bit to begin write
; Wait for write to complete
; Increment address
; Not zero, do it again
EECON1, WREN
INTCON, GIE
; Disable writes
; Enable interrupts
DS41412B-page 108
Preliminary
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