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C8051F70X_0910 Datasheet, PDF (42/290 Pages) Silicon Laboratories – Mixed Signal ISP Flash MCU Family
C8051F70x/71x
Table 7.5. Internal Voltage Regulator Electrical Characteristics
VDD = 3.0 V, –40 to +85 °C unless otherwise specified.
Parameter
Input Voltage Range
Bias Current
Conditions
Normal Mode
Bypass Mode
Min Typ
1.8
—
—
80
—
50
Max
3.6
TBD
TBD
Units
V
µA
µA
Table 7.6. Flash Electrical Characteristics
Parameter
Flash Size (Note 1)
Endurance (Erase/Write)
Erase Cycle Time
Write Cycle Time
Conditions
C8051F702/3/6/7
C8051F700/1/4/5
C8051F708/9, C8051F710/1/2/3/4/5
25 MHz Clock
25 MHz Clock
Notes:
1. Includes Security Lock Byte
Min Typ
16384
15360
8192
TBD TBD
TBD 20
TBD 40
Max Units
bytes
bytes
bytes
— cycles
TBD ms
TBD µs
Table 7.7. Internal High-Frequency Oscillator Electrical Characteristics
VDD = 1.8 to 3.6 V; TA = –40 to +85 °C unless otherwise specified. Use factory-calibrated settings.
Parameter
Conditions
Min Typ Max
Oscillator Frequency
IFCN = 11b
24 24.5 25
Oscillator Supply Current 25 °C, VDD = 3.0 V,
OSCICN.7 = 1,
— 350 TBD
OCSICN.5 = 0
Units
MHz
µA
Table 7.8. Capacitive Sense Electrical Characteristics
VDD = 1.8 to 3.6 V; TA = –40 to +85 °C unless otherwise specified.
Parameter
Conditions
Min
Conversion Time
Single Conversion
35
Number of Channels
Capacitance per Code
—
External Capacitive Load
—
Quantization Noise
RMS
—
(Note 1)
Peak-to-Peak
—
Supply Current
CS module alone, No Cap
—
CS module alone, Maximum Cap
—
Wake-on-CS Threshold (Note 2)
—
Power Supply Rejection
—
Typ
40
32
1
—
3
20
40
75
130
TBD
Max
50
—
TBD
TBD
TBD
TBD
TBD
TBD
—
Units
µs
Channels
fF
pF
fF
fF
µA
µA
µA
fF/V
Notes:
1. RMS Noise is equivalent to one standard deviation. Peak-to-peak noise encompasses ±3.3 standard
deviations.
2. Includes only current from regulator, CS module, and MCU in suspend mode.
42
Rev. 0.3