S9S12G128F0CLF Datasheet, PDF (755/1158 Pages) Freescale Semiconductor, Inc – MC9S12G Family Reference Manual

Chapter 23
48 KByte Flash Module (S12FTMRG48K1V1)
Revision
Number
V01.04
V01.05
Rev.1.10
Revision
Date
17 Jun 2010
20 aug 2010
31 Jan 2011
Table 23-1. Revision History
Sections
Affected
Description of Changes
23.4.6.1/23-789 Clarify Erase Verify Commands Descriptions related to the bits MGSTAT[1:0]
23.4.6.2/23-790 of the register FSTAT.
23.4.6.3/23-790
23.4.6.14/23-80
0
23.4.6.2/23-790 Updated description of the commands RD1BLK, MLOADU and MLOADF
23.4.6.12/23-79
7
23.4.6.13/23-79
9
23.3.2.9/23-772 Updated description of protection on Section 23.3.2.9
23.1 Introduction
The FTMRG48K1 module implements the following:
• 48Kbytes of P-Flash (Program Flash) memory
• 1,536bytes of EEPROM memory
The Flash memory is ideal for single-supply applications allowing for field reprogramming without
requiring external high voltage sources for program or erase operations. The Flash module includes a
memory controller that executes commands to modify Flash memory contents. The user interface to the
memory controller consists of the indexed Flash Common Command Object (FCCOB) register which is
written to with the command, global address, data, and any required command parameters. The memory
controller must complete the execution of a command before the FCCOB register can be written to with a
new command.
CAUTION
A Flash word or phrase must be in the erased state before being
programmed. Cumulative programming of bits within a Flash word or
phrase is not allowed.
MC9S12G Family Reference Manual, Rev.1.10
Freescale Semiconductor
755