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S9S12G128F0CLF Datasheet, PDF (657/1158 Pages) Freescale Semiconductor, Inc – MC9S12G Family Reference Manual | |||
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16 KByte Flash Module (S12FTMRG16K1V1)
⢠Single bit fault correction and double bit fault detection within a 32-bit double word during read
operations
⢠Automated program and erase algorithm with verify and generation of ECC parity bits
⢠Fast sector erase and phrase program operation
⢠Ability to read the P-Flash memory while programming a word in the EEPROM memory
⢠Flexible protection scheme to prevent accidental program or erase of P-Flash memory
21.1.2.2 EEPROM Features
⢠512 bytes of EEPROM memory composed of one 512 byte Flash block divided into 128 sectors of
4 bytes
⢠Single bit fault correction and double bit fault detection within a word during read operations
⢠Automated program and erase algorithm with verify and generation of ECC parity bits
⢠Fast sector erase and word program operation
⢠Protection scheme to prevent accidental program or erase of EEPROM memory
⢠Ability to program up to four words in a burst sequence
21.1.2.3 Other Flash Module Features
⢠No external high-voltage power supply required for Flash memory program and erase operations
⢠Interrupt generation on Flash command completion and Flash error detection
⢠Security mechanism to prevent unauthorized access to the Flash memory
21.1.3 Block Diagram
The block diagram of the Flash module is shown in Figure 21-1.
MC9S12G Family Reference Manual, Rev.1.10
Freescale Semiconductor
657
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