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S9S12G128F0CLF Datasheet, PDF (1096/1158 Pages) Freescale Semiconductor, Inc – MC9S12G Family Reference Manual | |||
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Electrical Characteristics
FTMRG32K1, FTMRG16K1:
tdcheck = 2620 â
f--N----V---M-1---B---U---S-
A.7.1.3 Erase Verify P-Flash Section (FCMD=0x03)
The maximum time to erase verify a section of P-Flash depends on the number of phrases being veriï¬ed
(NVP) and is given by:
t â (550 + NVP) â
f--N----V---M-1---B---U---S-
A.7.1.4 Read Once (FCMD=0x04)
The maximum read once time is given by:
t = 550 â
f--N----V---M-1---B---U---S-
A.7.1.5 Program P-Flash (FCMD=0x06)
The programming time for a single phrase of four P-Flash words and the two seven-bit ECC ï¬elds is
dependent on the bus frequency, fNVMBUS, as well as on the NVM operating frequency, fNVMOP.
The typical phrase programming time is given by:
tppgm â 62 â
f--N----V--1-M----O---P-- + 2900 â
f--N----V---M-1---B---U---S-
The maximum phrase programming time is given by:
tppgm â 62 â
f--N----V--1-M----O---P-- + 3100 â
f--N----V---M-1---B---U---S-
A.7.1.6 Program Once (FCMD=0x07)
The maximum time required to program a P-Flash Program Once ï¬eld is given by:
t â 62 â
-f-N----V--1-M----O---P-- + 2900 â
f--N----V---M-1---B---U---S-
A.7.1.7 Erase All Blocks (FCMD=0x08)
The time required to erase all blocks is given by:
1096
MC9S12G Family Reference Manual, Rev.1.10
Freescale Semiconductor
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