S9S12G128F0CLF Datasheet, PDF (655/1158 Pages) Freescale Semiconductor, Inc – MC9S12G Family Reference Manual

Chapter 21
16 KByte Flash Module (S12FTMRG16K1V1)
Revision
Number
V01.04
V01.05
Rev.1.10
Revision
Date
17 Jun 2010
20 aug 2010
31 Jan 2011
Table 21-1. Revision History
Sections
Affected
Description of Changes
21.4.6.1/21-685 Clarify Erase Verify Commands Descriptions related to the bits MGSTAT[1:0]
21.4.6.2/21-686 of the register FSTAT.
21.4.6.3/21-686
21.4.6.14/21-69
6
21.4.6.2/21-686 Updated description of the commands RD1BLK, MLOADU and MLOADF
21.4.6.12/21-69
3
21.4.6.13/21-69
5
21.3.2.9/21-671 Updated description of protection on Section 21.3.2.9
21.1 Introduction
The FTMRG16K1 module implements the following:
• 16Kbytes of P-Flash (Program Flash) memory
• 512 bytes of EEPROM memory
The Flash memory is ideal for single-supply applications allowing for field reprogramming without
requiring external high voltage sources for program or erase operations. The Flash module includes a
memory controller that executes commands to modify Flash memory contents. The user interface to the
memory controller consists of the indexed Flash Common Command Object (FCCOB) register which is
written to with the command, global address, data, and any required command parameters. The memory
controller must complete the execution of a command before the FCCOB register can be written to with a
new command.
CAUTION
A Flash word or phrase must be in the erased state before being
programmed. Cumulative programming of bits within a Flash word or
phrase is not allowed.
MC9S12G Family Reference Manual, Rev.1.10
Freescale Semiconductor
655