S9S12G128F0CLF Datasheet, PDF (1099/1158 Pages) Freescale Semiconductor, Inc – MC9S12G Family Reference Manual

t = 500 ⋅ _f--N----_V---_M-1---_B---_U---_S-
Electrical Characteristics
A.7.1.13 Set Field Margin Level (FCMD=0x0E)
The maximum set field margin level time is given by:
t = 510 ⋅ _f--N----_V---_M-1---_B---_U---_S-
A.7.1.14 Erase Verify EEPROM Section (FCMD=0x10)
The time required to Erase Verify EEPROM for a given number of words N_W is given by:
t_dcheck ≈ (520 + N_W) ⋅ _f--N----_V---_M-1---_B---_U---_S-
A.7.1.15 Program EEPROM (FCMD=0x11)
EEPROM programming time is dependent on the number of words being programmed and their location
with respect to a row boundary since programming across a row boundary requires extra steps.
The typical EEPROM programming time is given by the following equation, where N_W denotes the
number of words:
t_dpgm
≈
⎛
⎝
(
34
⋅
N_W)
⋅
-f-_N----_V--1-_M----_O---_P--
⎞
⎠
+
⎛
⎝
(
600
+
( 940
⋅
N_W))
⋅
-f-_N----_V---_M-1---_B---_U---_S-
⎞
⎠
The maximum EEPROM programming time is given by:
t_dpgm
≈
⎝⎛ ^{( 34}
⋅
N_W)
⋅
f--_N^----_V^--1-_M^----_O^---_P^--
⎞
⎠
+
⎝⎛ ^{( 600}
+
( 1020
⋅
N_W ))
⋅
f--_N^----_V^---_M^-1---_B^---_U^---_S^-
⎞
⎠
A.7.1.16 Erase EEPROM Sector (FCMD=0x12)
Typical EEPROM sector erase times, expected on a new device where no margin verify fails occur, is given
by:
t_dera ≈ 5025 ⋅ _f--N----_V--1-_M----_O---_P-- + 710 ⋅ _f--N----_V---_M-1---_B---_U---_S-
Freescale Semiconductor
MC9S12G Family Reference Manual, Rev.1.10
1099