K4Y50164UC Datasheet, PDF (59/76 Pages) Samsung semiconductor – 512Mbit XDR TM DRAM(C-die)

K4Y50164UC
K4Y50084UC
K4Y50044UC
K4Y50024UC
XDR^TM DRAM
13.0 Operating Characteristics
13.1 Electrical Characteristics
Table15 summarizes all electrical parameters (temperature, current and voltage) that characterize this memory component. The only
exception is the supply current values(I_DD) under different operating conditions covered in the Supply Current Profile section.
The first section of parameters is concerned with the thermal characteristics of the memory component.
Ther second section of parameters is concerned with the current needed by the RQ pins and V_REF pin.
The third section of parameters is concerned with the current needed by the DQ pins and voltage levels produced by the DQ pins when
driving read data. This section is also concerned with the current needed by the V_TERM pin, and with the resistance levels produced for
the internal termination components that attach to the DQ pins.
The fourth section of parameters determines the output voltage levels and the current needed for the serial interface signals.
Table 15 : Electrical Characteristics
Symbol
Θ_JC
I_I,RSL
I_REF,RSL
V_OSW,DQ
R_TERM,DQ
V_OL,SI
V_OH,SI
Parameter
Junction-to-case thermal resistance
RSL RQ or Serial Interface input current @ ( V_IN= V_IH,RQ,MAX)
V_REF,RSL current @ V_REF,RSL,MAX flowing into V_REF pin
DRSL DQ outputs - high-low swing: V_OSW,DQ=(V_IH,DQ-V_IL,DQN)
or (V_IH,DQN-_VIL,DQ)
DRSL DQ outputs - termination resistance
RSL serial interface SDO output - low voltage
RSL serial interface SDO output - high voltage
Minimum
1.7
-10
-10
Maximum
10
10
0.200
40.0
0.0
V_TERM,RSL - 0.25
0.400
60.0
0.25
V_TERM,RSL
Units
°C/Watt
uA
uA
V
Ω
V
V
13.2 Supply Current Profile
In this section, Table16 summarizes the supply current (I_DD) that characterizes this memory component. This parameter is shown under
different operating conditions.
Table 16 : Supply Current Profile
Symbol
Power State and Steady State
Transaction Rates
Maximum
@t_CYCLE= 2.00 ns
Maximum
@t_CYCLE= 2.50 ns
x16 x8 x4 x2 x16 x8 x4 x2
Maximum
@t_CYCLE= 3.33 ns
Units
x16 x8 x4 x2
I_DD,PDN
I_DD,STBY
I_DD,ROW
I_DD,WR
I_DD,RD
I_TERM,DRSL,RD
I_TERM,DRSL,WR
Device in PDN, self-refresh enabled. ^a
25
25
25
mA
Device in STBY. This is for a device in STBY
with no packets on the Channel^a
330
270
220
mA
ACT command every t_RR,
PRE command every t_PP.a
ACT command every t_RR,
PRE command every t_PP,
WR command every t_CC.a
ACT command every t_RR,
PRE command every t_PP,
RD command every t_CC.a,b
720
600
480
mA
1260 1100 990 940 1050 910 830 800 850 740 670 640 mA
1500 1360 1270 1210 1300 1200 1100 1000 1050 980 900 820 mA
RD command every t_CC.c
170 90 40 20 170 90 40 20 170 90 40 20 mA
WR command every t_CC.c
100 50 30 15 100 50 30 15 100 50 30 15 mA
a. I_DD current @ V_DD,MAX flowing into V_DD pins
b.This does not include the I_OL,DQ sink current. The device dissipates I_OL,DQ•V_TERM,DQ in each DQ/DQN pair when driving data.
c. I_TERM,DRSL current @ V_TERM,DQ,MAX flowing into V_TERM pins
59 of 76
Rev. 1.1 August 2006