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| K4Y50164UC Datasheet, PDF (28/76 Pages) Samsung semiconductor – 512Mbit XDR TM DRAM(C-die) | |||
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K4Y50164UC
K4Y50084UC
K4Y50044UC
K4Y50024UC
XDRTM DRAM
Figure 10 : Read Transactions
CFM
CFMN
RQ11..0
DQ15..0
DQN15..0
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 T23
RD
a1
tCC
RD
a2
tCAC
Q(a1)
Q(a2)
Transaction a: RD
a0 = {Ba,Ra}
a1 = {Ba,Ca1}
a2 = {Ba,Ca2}
tCYCLE
a3 = {Ba}
Page-hit Read Example
CFM
CFMN
RQ11..0
DQ15..0
DQN15..0
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 T23
PRE
a3
tRP
ACT
a0
tRCD-R
RD
a1
tCC
RD
a2
tCAC
tCYCLE
Q(a1)
Q(a2)
Transaction a: RD
a0 = {Ba,Ra}
a1 = {Ba,Ca1}
a2 = {Ba,Ca2}
a3 = {Ba}
Page-miss Read Example
CFM
CFMN
RQ11..0
DQ15..0
DQN15..0
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 T23
ACT
a0
tRCD-R
RD
RD
PRE
a1
tCC
a2 tRDP
a3
tCAC
Q(a1)
Q(a2)
Transaction a: RD
a0 = {Ba,Ra}
a1 = {Ba,Ca1}
tCYCLE
a2 = {Ba,Ca2}
a3 = {Ba}
Page-empty Read Example
CFM
CFMN
RQ11..0
DQ15..0
DQN15..0
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 T23
tRAS
tRP
ACT
RD
PRE
ACT
a0
a1 tRDP
âtRDP a3
b0
tRCD-R
tCAC
Q(a1)
tCYCLE
Bb = Ba
Transaction a: RD
Transaction b: RD
a0 = {Ba,Ra}
b0 = {Bb,Rb}
a1 = {Ba,Ca1}
b1 = {Bb,Cb1}
a2 = {Ba,Ca2}
b2 = {Bb,Cb2}
a3 = {Ba}
b3 = {Bb}
Page-empty Read Example - Core Limited
28 of 76
Rev. 1.1 August 2006
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