 English |
|
|
|
|
|
|
|
| K4Y50164UC Datasheet, PDF (20/76 Pages) Samsung semiconductor – 512Mbit XDR TM DRAM(C-die) | |||
| |||
| ◁ |
K4Y50164UC
K4Y50084UC
K4Y50044UC
K4Y50024UC
XDRTM DRAM
Figure 5 : ACT-, RD-, WR-, PRE-to-RD Packet Interactions
CFM
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 T23
CCFFMMN
CFMN
RQ11..0
RQ11..0
ACT RD
ab
DQ15..0
DDQQN1155....00 No limit
DQN15..0
ACT
RD
a
tRCD-R
b
ARd Case (activate-read different bank)
a: ROWA Packet with ACT,Ba,Ra
b: COL Packet with RD,Bb,Cb
Ba =/ Bb
ARs Case (activate-read same bank)
a: ROWA Packet with ACT,Ba,Ra
b: COL Packet with RD,Bb,Cb
Ba = Bb
CCFFMM
CCFFMMN N
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 T23
RRQQ111.1.0..0
RD
RD
a tCC b
DDQQ115.5.0..0
DDQQNN151..50..0
RD
RD
a tCC b
RRd Case (read-read different bank)
a: COL Packet with RD,Ba,Ca
b: COL Packet with RD,Bb,Cb
Ba =/ Bb
RRs Case (read-read same bank)
a: COL Packet with RD,Ba,Ca
b: COL Packet with RD,Bb,Cb
Ba = Bb
CCFFMM
CCFFMMN N
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 T23
RRQQ111.1.0..0
WR
a
tâWR
RD
WR
b
a
tâWR
RD
b
DDQQ115.5.0..0
DDQQNN151..50..0
WRd Case (write-read different bank)
a: COL Packet with WR,Ba,Ca
b: COL Packet with RD,Bb,Cb
Ba =/ Bb
WRs Case (write-read same bank)
a: COL Packet with WR,Ba,Ca
b: COL Packet with RD,Bb,Cb
Ba = Bb
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 T23
CCFFMM
CCFFMMN N
RRQQ111.1.0..0
PRE RD
ab
DDQQ115.5.0..0 No limit
DDQQNN151..50..0
PRE
tRP
ACT
tRCD-R
RD
a
tRP+tRCD-R B
b
PRd Case (precharge-read different bank)
a: ROWP Packet with PRE,Ba
b: COL Packet with RD,Bb,Cb
Ba =/ Bb
PRs Case (precharge-read same bank)
a: ROWP Packet with PRE,Ba
b: COL Packet with RD,Bb,Cb
Ba = Bb
20 of 76
Rev. 1.1 August 2006
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese