K4Y50164UC Datasheet, PDF (43/76 Pages) Samsung semiconductor – 512Mbit XDR TM DRAM(C-die)

K4Y50164UC
K4Y50084UC
K4Y50044UC
K4Y50024UC
XDR^TM DRAM
Figure 44 : Refresh Transactions
CFM
CFMN
RQ11..0
DQ15..0
DQN15..0
T₀ T₁ T₂ T₃ T₄ T₅ T₆ T₇ T₈ T₉ T₁₀ T₁₁ T₁₂ T₁₃ T₁₄ T₁₅ T₁₆ T₁₇ T₁₈ T₁₉ T₂₀ T₂₁ T₂₂ T₂₃
REFA
a0
t_RAS
REFP
t_RP
t_RC
a1
t_REF
REFA
b0
REFA
c0
t_CYCLE
Bb = Ba
Bc/Rc = Ba/Ra
Transaction a: REF
Transaction b: REF
Transaction c: REF
a0 = {Ba,REFR}
a0 = {Ba,REFR}
c0 = {Bc,REFR}
a1 = {Ba}
b1 = {Bb}
c1 = {Bc}
Refresh Transaction
CFM
CFMN
RQ11..0
(ACT)
RQ11..0
(PRE)
T₀ T₁ T₂ T₃ T₄ T₅ T₆ T₇ T₈ T₉ T₁₀ T₁₁ T₁₂ T₁₃ T₁₄ T₁₅ T₁₆ T₁₇ T₁₈ T₁₉ T₂₀ T₂₁ T₂₂ T₂₃
REFA
a0
t_RR
REFA
b0
REFA
c0
REFP
a1
REFA
d0
REFP
b1
REFA
e0
REFP
c1
REFA
f0
REFP
d1
RQ11..0
(ALL)
DQ15..0
DQN15..0
REFA
a0
REFA
b0
REFA
c0
REFP
a1
REFA
d0
REFP
b1
REFA
e0
REFP
c1
REFA
f0
REFP
d1
CFM
CFMN
RQ11..0
(ACT)
RQ11..0
(PRE)
T₂₄ T₂₅ T₂₆ T₂₇ T₂₈ T₂₉ T₃₀ T₃₁ T₃₂ T₃₃ T₃₄ T₃₅ T₃₆ T₃₇ T₃₈ T₃₉ T₄₀ T₄₁ T₄₂ T₄₃ T₄₄ T₄₅ T₄₆ T₄₇
This REFI increments REFR
REFA
g0
REFP
e1
REFI
h0
REFP
f1
REFA
i0
REFP
g1
REFP
h1
t_CYCLE
RQ11..0
(ALL)
DQ15..0
DQN15..0
REFA
g0
REFP
e1
REFA
h0
REFP
f1
REFA
i0
REFP
g1
REFP
h1
Ba,Bb,Bc,Bd,
Be,Bf,Bg and
Bh are
different banks.
Bi = Ba
Transaction a: REF
Transaction b: REF
Transaction c: REF
Transaction d: REF
Transaction e: REF
Transaction f: REF
Transaction g: REF
Transaction h: REF
Transaction i: REF
a0 = {Ba,REFR}
b0 = {Bb,REFR}
c0 = {Bc,REFR}
d0 = {Bd,REFR}
e0 = {Be,REFR}
f0 = {Bc,REFR}
g0 = {Bd,REFR}
h0 = {Be,REFR}
i0 = {Ba,REFR+1}
a1 = {Ba}
b1 = {Bb}
c1 = {Bc}
d1 = {Bd}
e1 = {Be}
f1 = {Bf}
g1 = {Bg}
h1 = {Bh}
i1 = {Bi}
Interleaved Refresh Example
43 of 76
Rev. 1.1 August 2006