K4Y50164UC Datasheet, PDF (46/76 Pages) Samsung semiconductor – 512Mbit XDR TM DRAM(C-die)

K4Y50164UC
K4Y50084UC
K4Y50044UC
K4Y50024UC
Figure 46 : Power State Management
CFM
CFMN
RQ11..0
CMD
a
DQ15..0
DQN15..0
t_CYCLE
t_CMD-PDN
PDN
t_PDN-CFM
ba
t_PDN-ENTRY
Transaction a: Last precharge command
Transaction b: PDN
XDR^TM DRAM
No signal
Powerdown State...
Powerdown Entry
SCK
S₀ S₂ S₄ S₆ S₈ S₁₀ S₁₂ S₁₄ S₁₆ S₁₈ S₂₀ S₂₂ S₂₄ S₂₆ S₂₈ S₃₀ S₃₂ S₃₄
RST
Power-up transaction
CMD
Start SCMD
2’h0,SID[5:0]
SADR[7:0]
SWD[7:0]
‘1’ ‘1’ ‘0’ ‘0’ ‘0’ ‘0’‘0’ ‘0’ 5 4 3 2 1 0 7 6 5 4 3 2 1 0 ‘0’ 7 6 5 4 3 2 1 0 ‘0’
SDI
(input)
SDO
(output)
CFM
CFMN
RQ11..0
DQ15..0
DQN15..0
No signal
....Powerdown State
t_CFM-PDN
t_PDN-EXIT
t_PDN-CMD
t_CYC,SCK
t_CYCLE
CFM
CFMN
RQ11..0
DQ15..0
DQN15..0
REFA
1
t_PDN-CMD
Transaction 1: REFA
Transaction 2: REFA
Transaction n-1: REFA
Transaction n: REFI
REFA
2
REFI
n
REFP
n-2
REFP
n-1
The final REFA/REFI command increments the REFr register
REFP
n
t_CYCLE
Powerdown Exit
46 of 76
Rev. 1.1 August 2006