MC68HC08AZ32A Datasheet, PDF (65/456 Pages) Motorola, Inc – HCMOS Microcontroller Unit

Freescale Semiconductor, Inc.
EEPROM
Functional Description
is written to the desired address, do not read EEPROM locations other
than the written location. (Reading an EEPROM location returns the
latched data and causes the read address to be latched).
C. The EEPGM bit cannot be set if the EELAT bit is cleared or a non-
valid EEPROM address is latched. This is to ensure proper
programming sequence. Once EEPGM is set, do not read any EEPROM
locations; otherwise, the current program cycle will be unsuccessful.
When EEPGM is set, the on-board programming sequence will be
activated.
D. The delay time for the EEPGM bit to be cleared in AUTO mode is less
than t_EEPGM. However, on other MCUs, this delay time may be different.
For forward compatibility, software should not make any dependency on
this delay time.
E. Any attempt to clear both EEPGM and EELAT bits with a single
instruction will only clear EEPGM. This is to allow time for removal of
high voltage from the EEPROM array.
5.5.5.3 EEPROM Erasing
The programmed state of an EEPROM bit is logic 0. Erasing changes
the state to a logic 1. Only EEPROM bytes in the non-protected blocks
and the EENVR register can be erased.
Use the following procedure to erase a byte, block or the entire
EEPROM array:
1. Configure EERAS1 and EERAS0 for byte, block or bulk erase; set
EELAT in EECR.^(A)
NOTE:
If using the AUTO mode, also set the AUTO bit in Step 1.
2. Byte erase: write any data to the desired address.^(B)
Block erase: write any data to an address within the desired
block.^(B)
Bulk erase: write any data to an address within the array.^(B)
3. Set the EEPGM bit.^(C) Go to Step 7 if AUTO is set.
MC68HC08AZ32A — Rev 1.0
MOTOROLA
EEPROM
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Technical Data
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