MC68HC908KX8 Datasheet, PDF (54/310 Pages) Motorola, Inc – Microcontrollers

FLASH Memory
4.7 FLASH Program/Read Operation
Programming of the FLASH memory is done on a row basis. A row
consists of 32 consecutive bytes starting from addresses $XX00,
$XX20, $XX40 ,$XX60, $XX80, $XXA0, $XXC0, and $XXE0.
Use this step-by-step procedure to program a row of FLASH memory
(Figure 4-2 is a flowchart representation).
NOTE: To avoid program disturbs, the row must be erased before any byte on
that row is programmed.
1. Set the PGM bit. This configures the memory for program
operation and enables the latching of address and data for
programming.
2. Read from the FLASH block protect register.
3. Write any data to any FLASH address within the row address
range desired.
4. Wait for a time, t_NVS (minimum of 10 µs).
5. Set the HVEN bit.
6. Wait for a time, t_PGS (minimum of 5 µs).
7. Write data to the FLASH address⁽¹⁾ to be programmed.
8. Wait for a time, t_PROG (minimum of 30 µs).
9. Repeat steps 7 and 8 until all the bytes within the row are
programmed.
10. Clear the PGM bit.⁽¹⁾
11. Wait for a time, t_NVH (minimum of 5 µs).
12. Clear the HVEN bit.
13. After a time, t_RCV (minimum of 1 µs), the memory can be accessed
in read mode again.
Technical Data
54
1. The time between each FLASH address change, or the time between the last FLASH address
programmed to clearing the PGM bit, must not exceed the maximum programming time, t_PROG
maximum.
MC68HC908KX8 • MC68HC908KX2 • MC68HC08KX8 — Rev. 1.0
FLASH Memory
MOTOROLA