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MC68HC908KX8 Datasheet, PDF (289/310 Pages) Motorola, Inc – Microcontrollers
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Electrical Specifications
Memory Characteristics
20.12 Memory Characteristics
Characteristic
Symbol/
Description
Min
Max
Units
RAM data retention voltage(1)
VRDR
1.3
—
V
FLASH program bus clock frequency
—
1
—
MHz
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
fRead(2)
32 k 8.4 M
Hz
tErase(3)
1
—
ms
tMErase(4)
4
—
ms
tNVS
10
—
µs
tNVH
5
—
µs
tNVHL
100
—
µs
tPGS
5
—
µs
tPROG
30
40
µs
tRCV(5)
1
—
µs
FLASH cumulative program HV period
tHV(6)
—
4
ms
FLASH row erase endurance(7)
—
10 K
—
Cycles
FLASH row program endurance(6)
—
10 K
—
Cycles
FLASH data retention time(8)
—
10
—
Years
1. Specification is characterized but not tested.
2. fRead is defined as the frequency range for which the FLASH memory can be read.
3. If the page erase time is longer than tErase (min), there is no erase-disturb, but it reduces the endurance of the FLASH
memory.
4. If the mass erase time is longer than tMErase (min), there is no erase-disturb, but it reduces the endurance of the FLASH
memory.
5. tRCV is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clear-
ing HVEN to logic 0.
6. tHV is defined as the cumulative high voltage programming time to the same row before next erase.
tHV must satisfy this condition: tNVS + tNVH + tPGS + (tPROG × 64) ≤ tHV max.
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
erase/program cycles.
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time speci-
fied.
MC68HC908KX8 • MC68HC908KX2 • MC68HC08KX8 — Rev. 1.0
MOTOROLA
Electrical Specifications
Technical Data
289
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