MC68HC908KX8 Datasheet, PDF (53/310 Pages) Motorola, Inc – Microcontrollers

FLASH Memory
FLASH Mass Erase Operation
4.6 FLASH Mass Erase Operation
Use this step-by-step procedure to erase entire FLASH memory to read
as logic 1:
1. Set both the ERASE bit and the MASS bit in the FLASH control
register.
2. Read from the FLASH block protect register.
3. Write any data to any FLASH address⁽¹⁾ within the FLASH
memory address range.
4. Wait for a time, t_NVS (minimum of 10 µs).
5. Set the HVEN bit.
6. Wait for a time, t_MErase (minimum of 4 ms).
7. Clear the ERASE bit.
8. Wait for a time, t_NVHL (minimum of 100 µs).
9. Clear the HVEN bit.
10. After a time, t_RCV (minimum of 1 µs), the memory can be accessed
again in read mode.
NOTE:
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps.
1. When in monitor mode, with security sequence failed (see Section 18. Monitor ROM (MON)),
write to the FLASH block protect register instead of any FLASH address.
MC68HC908KX8 • MC68HC908KX2 • MC68HC08KX8 — Rev. 1.0
MOTOROLA
FLASH Memory
Technical Data
53