HYB18T512400AC5 Datasheet, PDF (76/96 Pages) Infineon Technologies AG – 512-Mbit Double-Data-Rate-Two SDRAM

HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
AC & DC Operating Conditions
5.6
Power & Ground Clamp V-I Characteristics
Power and Ground clamps are provided on address pins. The V-I characteristics for pins with clamps is
(A[13:0], BA[1:0]), RAS, CAS, CS, WE, CKE and ODT shown in Table 35.
Table 35 Power & Ground Clamp V-I Characteristics
Voltage across clamp (V)
Minimum Power Clamp
Current (mA)
0.0
0
0.1
0
0.2
0
0.3
0
0.4
0
0.5
0
0.6
0
0.7
0
0.8
0.1
0.9
1.0
1.0
2.5
1.1
4.7
1.2
6.8
1.3
9.1
1.4
11.0
1.5
13.5
1.6
16.0
1.7
18.2
1.8
21.0
Minimum Ground Clamp Current (mA)
0
0
0
0
0
0
0
0
0.1
1.0
2.5
4.7
6.8
9.1
11.0
13.5
16.0
18.2
21.0
Data Sheet
76
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P