HYB18T512400AC5 Datasheet, PDF (72/96 Pages) Infineon Technologies AG – 512-Mbit Double-Data-Rate-Two SDRAM

HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
AC & DC Operating Conditions
7) Timing skew due to DRAM output slew rate mis-match between DQS / DQS and associated DQ’s is included
in t_DQSQ and t_QHS specification.
8) DRAM output slew rate specification applies to 400, 533 and 667 MT/s speed bins.
5.4
Default Output V-I Characteristics
DDR2 SDRAM output driver characteristics are defined
for full strength default operation as selected by the
EMRS(1) bits A[9:7] =’111’. Figure 65 and Figure 66
show the driver characteristics graphically and the
tables show the same data suitable for input into
simulation tools.
Table 30 Full Strength Default Pull-up Driver Characteristics
Voltage (V) Pull-up Driver Current [mA]
Min.
Nominal Default low Nominal Default high
0.2
–8.5
–11.1
–11.8
0.3
–12.1
–16.0
–17.0
0.4
–14.7
–20.3
–22.2
0.5
–16.4
–24.0
–27.5
0.6
–17.8
–27.2
–32.4
0.7
–18.6
–29.8
–36.9
0.8
–19.0
–31.9
–40.8
0.9
–19.3
–33.4
–44.5
1.0
–19.7
–34.6
–47.7
1.1
–19.9
–35.5
–50.4
1.2
–20.0
–36.2
–52.5
1.3
–20.1
–36.8
–54.2
1.4
–20.2
–37.2
–55.9
1.5
–20.3
–37.7
–57.1
1.6
–20.4
–38.0
–58.4
1.7
–20.6
–38.4
–59.6
1.8
—
–38.6
–60.8
1.9
—
—
—
Max.
–15.9
–23.8
–31.8
–39.7
–47.7
–55.0
–62.3
–69.4
–75.3
–80.5
–84.6
–87.7
–90.8
–92.9
–94.9
–97.0
–99.1
–101.1
Note: The driver characteristics evaluation conditions are:
1. Nominal Default 25^oC (Tcase), VDDQ = 1.8 V, typical process
2. Minimum 95 ^oC (T_case), V_DDQ = 1.7V, slow–slow process
3. Maximum 0 ^oC (T_case). V_DDQ = 1.9 V, fast–fast process
Data Sheet
72
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P