HYB18T512400AC5 Datasheet, PDF (56/96 Pages) Infineon Technologies AG – 512-Mbit Double-Data-Rate-Two SDRAM

HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Functional Description
2.8.3 Read or Write to Precharge Command Spacing Summary
The following table summarizes the minimum
command delays between Read, Read w/AP, Write,
Write w/AP to the Precharge commands to the same
banks and Precharge-All commands.
Table 14 Minimum Command Delays
From Command To Command
READ
PRECHARGE (to same banks as
READ)
PRECHARGE-ALL
READ w/AP
PRECHARGE (to same banks as
READ w/AP)
PRECHARGE-ALL
WRITE
PRECHARGE (to same banks as
WRITE)
PRECHARGE-ALL
WRITE w/AP
PRECHARGE (to same banks as
WRITE w/AP)
PRECHARGE-ALL
PRECHARGE
PRECHARGE (to same banks as
PRECHARGE)
PRECHARGE-ALL
PRECHARGE-ALL PRECHARGE
PRECHARGE-ALL
Minimum Delay between “From
Command” to “To Command”
AL + BL/2 + max(t_RTP, 2) - 2
Units Notes
t_CK
1)2)
AL + BL/2 + max(t_RTP, 2) - 2
AL + BL/2 + max(t_RTP, 2) - 2
t_CK
1)2)
t_CK
1)2)
AL + BL/2 + max(t_RTP, 2) - 2
WL + BL/2 + t_WR
t_CK
1)2)
t_CK
2)3)
WL + BL/2 + t_WR
WL + BL/2 + WR
t_CK
2)3)
t_CK
2)
WL + BL/2 + WR
1
t_CK
2)
t_CK
2)
1
t_CK
2)
1
t_CK
2)
1
t_CK
2)
1) RU{t_RTP(ns) / t_CK(ns)} must be used, where RU stands for “Round Up”
2) For a given bank, the precharge period should be counted from the latest precharge command, either one bank precharge or precharge-
all, issued to that bank. The precharge period is satisfied after t_RP or t_{RP, all} depending on the latest precharge command issued to that bank
3) RU{t_WR(ns) / t_CK(ns)} must be used, where RU stands for “Round Up”
Data Sheet
56
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P