HYB18T512400AC5 Datasheet, PDF (73/96 Pages) Infineon Technologies AG – 512-Mbit Double-Data-Rate-Two SDRAM

HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
AC & DC Operating Conditions
0
-20
-40
-60
-80
-100
-120
0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2
VDDQ to VOUT (V)
Minimum
Nominal Default Low
Nominal Default High
Maximum
Figure 65 Full Strength Default Pull-up Driver Diagram
Table 31 Full Strength Default Pull–down Driver Characteristics
Voltage (V) Pull-down Driver Current [mA]
Minimum
Nominal Default low Nominal Default high
0.2
8.5
11.3
11.8
0.3
12.1
16.5
16.8
0.4
14.7
21.2
22.1
0.5
16.4
25.0
27.6
0.6
17.8
28.3
32.4
0.7
18.6
30.9
36.9
0.8
19.0
33.0
40.9
0.9
19.3
34.5
44.6
1.0
19.7
35.5
47.7
1.1
19.9
36.1
50.4
1.2
20.0
36.6
52.6
1.3
20.1
36.9
54.2
1.4
20.2
37.1
55.9
1.5
20.3
37.4
57.1
1.6
20.4
37.6
58.4
1.7
20.6
37.7
59.6
1.8
—
37.9
60.9
1.9
—
—
—
Maximum
15.9
23.8
31.8
39.7
47.7
55.0
62.3
69.4
75.3
80.5
84.6
87.7
90.8
92.9
94.9
97.0
99.1
101.1
Note: The driver characteristics evaluation conditions are:
1. Nominal Default 25 ^oC (T_case), V_DDQ = 1.8 V, typical process,
2. Minimum 95 ^oC (T_case), V_DDQ = 1.7V, slow-slow process,
3. Maximum 0 ^oC (T_case). V_DDQ = 1.9 V, fast-fast process
Data Sheet
73
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P