HYB18T512400AC5 Datasheet, PDF (67/96 Pages) Infineon Technologies AG – 512-Mbit Double-Data-Rate-Two SDRAM

4
Operating Conditions
HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
Operating Conditions
Table 19 Absolute Maximum Ratings
Symbol
V_DD
V_DDQ
V_DDL
V_IN, V_OUT
T_STG
Parameter
Voltage on V_DD pin relative to V_SS
Voltage on V_DDQ pin relative to V_SS
Voltage on VDDL pin relative to V_SS
Voltage on any pin relative to V_SS
Storage Temperature
Rating
-1.0 to +2.3
-0.5 to +2.3
-0.5 to +2.3
-0.5 to +2.3
-55 to +100
Units
V
V
V
V
°C
Notes
1)
1)
1)
1)
1)
1) Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Table 20 DRAM Component Operating Temperature Range
Symbol
T_OPER
Parameter
Operating Temperature
Rating
0 to 95
Units
o_C
Notes
1)2)3)4)
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM. For measurement conditions,
please refer to the JEDEC document JESD51-2.
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation,
the DRAM case temperature must be maintained between 0 - 95 ^oC under all other specification parameters.
3) Above 85 ^oC case temperature the Auto-Refresh command interval has to be reduced to t_REFI = 3.9 µs.
4) Self-Refresh period is hard-coded in the chip and therefore it is imperative that the system ensures the DRAM is below
85^oC case temperature before initiating self-refresh operation.
Data Sheet
67
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P