HYB18T512400AC5 Datasheet, PDF (75/96 Pages) Infineon Technologies AG – 512-Mbit Double-Data-Rate-Two SDRAM

HYB18T512[400/800/160]A[C/F]–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
AC & DC Operating Conditions
Table 32 Full Strength Calibrated Pull-down Driver Characteristics
Voltage (V) Calibrated Pull-down Driver Current [mA]
Nominal Minimum
(21 Ohms)
Normal Low
(18.75 Ohms)
Nominal
(18 ohms)
Normal High
(17.25 Ohms)
0.2
9.5
0.3
14.3
0.4
18.7
10.7
11.5
11.8
16.0
16.6
17.4
21.0
21.6
23.0
Nominal
Maximum
(15 Ohms)
13.3
20.0
27.0
Note: The driver characteristics evaluation conditions are:
1. Nominal 25 ^oC (T_case), V_DDQ = 1.8 V, typical process
2. Nominal Low and Nominal High 25 ^oC (T_case), V_DDQ = 1.8V, any process
3. Nominal Minimum 95 ^oC (T_case). V_DDQ = 1.7 V, any process
4. Nominal Maximum 0 ^oC (T_case), V_DDQ = 1.9 V, any process
Table 33 Full Strength Calibrated Pull-up Driver Characteristics
Voltage (V) Calibrated Pull-up Driver Current [mA]
Nominal
Minimum
(21 Ohms)
Normal Low
(18.75 Ohms)
Nominal
(18 ohms)
0.2
–9.5
–10.7
–11.4
0.3
–14.3
–16.0
–16.5
0.4
–18.3
–21.0
–21.2
Normal High
(17.25 Ohms)
–11.8
–17.4
–23.0
Nominal
Maximum
(15 Ohms)
–13.3
–20.0
–27.0
Note: The driver characteristics evaluation conditions are:
1. Nominal 25 ^oC (T_case), V_DDQ = 1.8 V, typical process
2. Nominal Low and Nominal High 25 ^oC (T_case), V_DDQ = 1.8V, any process
3. Nominal Minimum 95 ^oC (T_case). V_DDQ = 1.7 V, any process
4. Nominal Maximum 0 ^oC (T_case), V_DDQ = 1.9 V, any process
5.5
Input / Output Capacitance
Table 34
Symbol
CCK
CDCK
CI
CDI
CIO
CDIO
Input / Output Capacitance
Parameter
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance,
DQ, DM, DQS, DQS, RDQS, RDQS
Input/output capacitance delta,
DQ, DM, DQS, DQS, RDQS, RDQS
min.
1.0
—
1.0
—
3.0
—
max.
2.0
0.25
2.0
0.25
4.0
0.5
Units
pF
pF
pF
pF
pF
pF
Data Sheet
75
Rev. 1.13, 2004-05
09112003-SDM9-IQ3P