M16C29 Datasheet, PDF (494/499 Pages) Renesas Technology Corp – RENESAS MCU M16C FAMILY / M16C/Tiny SERIES

REVISION HISTORY
M16C/29 Hardware Manual
Rev. Date
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Description
Summary
• Table 21.41 Recommended Operating Conditions VIH and VIL are modified
• Table 21.42 A/D Conversion Characeristics tSAMP deleted, note 4 added
• Table 21.43 Flash Memory Version Electrical Characteristics: Standard val-
ues of Program and Erase Endrance cycle modified, tps added
• Table 21.44 Flash Memory Version Electrical Characteristics: tps added,
data hold time added, note 1, 3, 8 modified, note 11 and 12 added
• Table 21.45 Power Supply Circuit from Timing CharacteristicsL Note 2 & 3
are deleted, td(S-R) and td(E-A) are deleted, figure modified
• Table 21.47 Electrical Characteristics(2) Note 4 is added
• Table 21.63 Electrical Characteristics(2) Note 4 is added
Precautions
• 22.2.1 PLL Frequency Synthesizer modified
• 22.2.2 Power Control Subsection sequence modified, 2., 3. and 4. information
modified
______
• 22.4.3 NMI Interrupt 2. information partially deleted, 6. information added
______
• 22.4.5 INT Interrupt 3. information added
• 22.4.6 Rewrite the Interrupt Control Register Example 1 is modified
• 22.6.1.3 Timer A (One-shot Timer Mode) 6. information added
• 22.6.3 Three-phase Motor Control Timer Function newly added
• 22.7.1 Rewrite the G1 IR Register description modified
• Figure 22.3 IC/OC Interrupt Flow Chart newly added
• 22.7.2 Rewrite the ICOCiIC Register newly added
• 22.7.3 Waveform Generating Function newly added
• 22.7.4 IC/OC Base Timer Interrupt newly added
• 22.8.2.1 Special Mode (I²C bus Mode) added
• 22.8.2.3 SI/O3, SI/O4 added
• 22.10 Multi-master I²C bus Interface added
• 22.12 Programmable I/O Ports 2. and 3. information modified
• 20.14 Mask ROM Version is added
• 22.15.1 Functions to Inhibit Rewriting Flash Memory Rewrite modified
• 22.15.2 Stop Mode modified
• 22.16.4 Low Power Disspation Mode, On-chip Oscillator Low Power Dissi-
pation Mode modified
• 22.15.7 Operating Speed modified
• 22.15.9 Interrupts modified
• 22.15.13 Regarding Programming/Erasure Times and Execution Time
modified
• 22.15.14 Definition of Programming/Erasure Times added
• 22.15.15 Flash Memory version Electrical Characteristics 10,000 E/W cycle
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