HD6437020 Datasheet, PDF (482/507 Pages) Hitachi Semiconductor – SuperH™ RISC engine

Table 19.8 Bus Timing (3)
Conditions: V_CC = 3.0 to 5.5 V, V_SS = 0 V, φ = 12.5 MHz, Ta = –20 to +75°C*
*: Normal products. Ta = –40 to +85°C for wide-temperature range products.
Item
Symbol Min
Max Unit Figures
Address delay time
t_AD
—
40 ns 19.21, 19.22, 19.24–
19.27, 19.32, 19.33
CS delay time 1
t_CSD1 —
40 ns 19.21, 19.22, 19.33
CS delay time 2
t_CSD2 —
40 ns
CS delay time 3
t_CSD3 —
40 ns 19.32
CS delay time 4
Access time 1^*4 35% duty^*1
from read strobe _{50% duty}
t_CSD4
t_RDAC1
—
t_cyc × 0.65 – 35
t_cyc × 0.5 – 35
40 ns
— ns 19.21,
— ns
Access time 2^*4 35% duty^*1 t_RDAC2
from read strobe _{50% duty}
Access time 3^*4 35% duty^*1 t_RDAC3
from read strobe _{50% duty}
t_cyc × (n+1.65) – 35^*2 —
t_cyc × (n+1.5) – 35^*2 —
t_cyc × (n+0.65) – 35^*2 —
t_cyc × (n+0.5) – 35^*2 —
ns 19.22, 19.23
ns
ns 19.32
ns
Read strobe delay time
t_RSD
—
40 ns 19.21, 19.22, 19.32
Read data set-up time
t_RDS
30
— ns 19.21, 19.22,
Read data hold time
t_RDH
0
— ns 19.24-19.27, 19.32
Write strobe delay time 1
t_WSD1 —
40 ns 19.22, 19.26, 19.27,
19.32, 19.33
Write strobe delay time 2
t_WSD2 —
30 ns 19.22, 19.26, 19.27,
19.32
Write strobe delay time 3
Write strobe delay time 4
Write data delay time 1
t_WSD3 —
t_WSD4 —
t_WDD1 —
40 ns 19.24, 19.25
40 ns 19.24, 19.25, 19.33
70 ns 19.22, 19.26, 19.27,
19.32
Write data delay time 2
Write data hold time
t_WDD2 —
t_WDH –10
40 ns 19.24, 19.25
— ns 19.22, 19.24–19.27,
19.32
Parity output delay time 1
Parity output delay time 2
Parity output hold time
t_WPDD1 —
t_WPDD2 —
t_WPDH –10
80 ns 19.22, 19.24, 19.27
40 ns 19.24, 19.25
— ns 19.22, 19.24–19.27
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