HD64F3687HV Datasheet, PDF (440/538 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer H8 Family/H8/300H Tiny Series

Section 23 Electrical Characteristics
23.2.6 Flash Memory Characteristics
Table 23.8 Flash Memory Characteristics
V_CC = 3.0 to 5.5 V, V_SS = 0.0 V, T_a = –20 to +75°C, unless otherwise indicated.
Item
Symbol Test Condition Min
Programming time (per 128 bytes)*¹*²*⁴
t_P
Erase time (per block) *¹*³*⁶
t_E
Reprogramming count
N_WEC
Programming Wait time after SWE
x
bit setting*¹
—
—
1000
1
Wait time after PSU
y
50
bit setting*¹
Wait time after P bit setting z1
1≤n≤6
28
*¹*⁴
z2
7 ≤ n ≤ 1000 198
z3
Additional-
8
programming
Wait time after P bit clear*¹ α
5
Wait time after PSU
β
5
bit clear*¹
Wait time after PV
γ
4
bit setting*¹
Wait time after
ε
2
dummy write*¹
Wait time after PV bit clear*¹ η
2
Wait time after SWE
θ
100
bit clear*¹
Maximum programming
N
—
count *¹*⁴*⁵
Values
Typ Max
7
200
100 1200
10000 —
—
—
—
—
30
32
200 202
10
12
—
—
—
—
—
—
—
—
—
—
—
—
—
1000
Unit
ms
ms
Times
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
Rev.5.00 Nov. 02, 2005 Page 406 of 500
REJ09B0027-0500