HD64F3687HV Datasheet, PDF (140/538 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer H8 Family/H8/300H Tiny Series

Section 7 ROM
entered by re-setting the P or E bit. However, PV and EV bit settings are retained, and a transition
can be made to verify mode. Error protection can be cleared only by a reset.
7.6 Programmer Mode
In programmer mode, a PROM programmer can be used to perform programming/erasing via a
socket adapter, just as a discrete flash memory. Use a PROM programmer that supports the MCU
device type with the on-chip 64-kbyte flash memory (FZTAT64V5).
7.7 Power-Down States for Flash Memory
In user mode, the flash memory will operate in either of the following states:
• Normal operating mode
The flash memory can be read and written to at high speed.
• Power-down operating mode
The power supply circuit of flash memory can be partly halted. As a result, flash memory can
be read with low power consumption.
• Standby mode
All flash memory circuits are halted.
Table 7.7 shows the correspondence between the operating modes of this LSI and the flash
memory. In subactive mode, the flash memory can be set to operate in power-down mode with the
PDWND bit in FLPWCR. When the flash memory returns to its normal operating state from
power-down mode or standby mode, a period to stabilize operation of the power supply circuits
that were stopped is needed. When the flash memory returns to its normal operating state, bits
STS2 to STS0 in SYSCR1 must be set to provide a wait time of at least 20 µs, even when the
external clock is being used.
Table 7.7 Flash Memory Operating States
LSI Operating State
Active mode
Subactive mode
Sleep mode
Subsleep mode
Standby mode
Flash Memory Operating State
PDWND = 0 (Initial Value)
PDWND = 1
Normal operating mode
Normal operating mode
Power-down mode
Normal operating mode
Normal operating mode
Normal operating mode
Standby mode
Standby mode
Standby mode
Standby mode
Rev.5.00 Nov. 02, 2005 Page 106 of 500
REJ09B0027-0500