LM3S5G31 Datasheet, PDF (327/1223 Pages) Texas Instruments – Stellaris LM3S5G31 Microcontroller

Stellaris^® LM3S5G31 Microcontroller
Bit/Field
3
2
1
Name
COMT
MERASE
ERASE
Type
R/W
R/W
R/W
Reset
0
0
0
Description
Commit Register Value
This bit is used to commit writes to Flash-memory-resident registers
and to monitor the progress of that process.
Value Description
1 Set this bit to commit (write) the register value to a
Flash-memory-resident register.
When read, a 1 indicates that the previous commit access is
not complete.
0 A write of 0 has no effect on the state of this bit.
When read, a 0 indicates that the previous commit access is
complete.
See “Non-Volatile Register Programming” on page 320 for more
information on programming Flash-memory-resident registers.
Mass Erase Flash Memory
This bit is used to mass erase the Flash main memory and to monitor
the progress of that process.
Value Description
1 Set this bit to erase the Flash main memory.
When read, a 1 indicates that the previous mass erase access
is not complete.
0 A write of 0 has no effect on the state of this bit.
When read, a 0 indicates that the previous mass erase access
is complete.
For information on erase time, see “Flash Memory” on page 1155.
Erase a Page of Flash Memory
This bit is used to erase a page of Flash memory and to monitor the
progress of that process.
Value Description
1 Set this bit to erase the Flash memory page specified by the
contents of the FMA register.
When read, a 1 indicates that the previous page erase access
is not complete.
0 A write of 0 has no effect on the state of this bit.
When read, a 0 indicates that the previous page erase access
is complete.
For information on erase time, see “Flash Memory” on page 1155.
July 03, 2014
327
Texas Instruments-Production Data