K5N1229ACD-BQ12 Datasheet, PDF (88/128 Pages) Samsung semiconductor – 512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash

datasheet K5N1229ACD-BQ12
Rev. 1.0
MCP Memory
2.0 ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
V_IN, V_OUT
-0.2 to VCCQ+0.3V
V
Power supply voltage relative to Vss
V_CC, V_CCQ
-0.2 to 2.5V
V
Power Dissipation
P_D
1.0
W
Storage temperature
T_STG
-55 to 150
°C
Operating Temperature
T_A
-25 to 85
°C
NOTE :
1) Stresses greater than "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to be used under recommended
operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reliability.
3.0 RECOMMENDED DC OPERATING CONDITIONS
Item
Symbol
Power supply voltage(Core)
V_CC
Power supply voltage(I/O)
Ground
V_CCQ
V_SS, V_SSQ
Input high voltage
V_IH
Input low voltage
V_IL
NOTE :
1) T_A= -25 to 85°C, otherwise specified.
2) Overshoot: V_CCQ +1.0V in case of pulse width ≤20ns. Overshoot is sampled, not 100% tested.
3) Undershoot: -1.0V in case of pulse width ≤20ns. Undershoot is sampled, not 100% tested.
Min
1.7
1.7
0
V_CCQ-0.4
-0.2³⁾
Typ
Max
Unit
1.8
1.95
V
1.8
1.95
V
0
0
V
-
V_CCQ+0.2²⁾
V
-
0.4
V
4.0 CAPACITANCE
Item
Input capacitance
Input/Output capacitance
NOTE :
1) Freq.=1MHz, T_A=25°C
2) Capacitance is sampled, not 100% tested.
Symbol
C_IN
C_IO
Test Condition
V_IN=0V
V_IO=0V
Min
Max
Unit
-
6
pF
-
6
pF
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