K5N1229ACD-BQ12 Datasheet, PDF (7/128 Pages) Samsung semiconductor – 512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash

datasheet K5N1229ACD-BQ12
5. Ordering Information
Samsung MCP Memory
2Chip MCP
K5 N 12 29 A C D - B Q 12
Device Type
N : Muxed NOR + Muxed UtRAM2
NOR Flash Density
12 : 512Mb, x16
UtRAM2 Density, (Organization)
29 : 128Mb, x16,(Ut2)
Operating Voltage
A : 1.8V/1.8V
Rev. 1.0
MCP Memory
UtRAM2 Access Time
12 : 108MHz
Flash Access Time
Q : 108MHz
Package
B : FBGA(HF, OSP LF)
Version
D : 5rd Generation
Block Architecture
C :Uniform Boot Block
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