K5N1229ACD-BQ12 Datasheet, PDF (39/128 Pages) Samsung semiconductor – 512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash

datasheet K5N1229ACD-BQ12
Rev. 1.0
MCP Memory
13.4 Erase/Program Operation
Parameter
WE Cycle Time¹⁾
Address Setup Time
Address Hold Time
AVD Low Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
CE Setup Time
CE Hold Time
WE High to AVD low
WE Pulse Width
WE Pulse Width High
Latency Between Read and Write Operations
Word Programming Operation ²⁾
Single word Buffer Program ²⁾
512-word Buffer Program ⁴⁾
Accelerated Programming Operation ³⁾
Accelerated Single word Buffer Program ³⁾
Accelerated 512-word Buffer Program ⁴⁾
Block Erase Operation (64KW block)
Blank check Operation (64KW block)
VPP Rise and Fall Time
VPP Setup Time (During Accelerated Programming)
Symbol
t_WC
t_AS
t_AH
t_AVDP
t_DS
t_DH
t_GHWL
t_CS
t_CH
t_WEA
t_WP
t_WPH
t_SR/W
t_PGM
t_{PGM_BP}
t_{PGM_BP}
t_ACCPGM
t_{ACCPGM_BP}
t_{ACCPGM_BP}
t_BERS
t_BLANK
t_VPP
t_VPS
All speed options
Unit
Min
Typ
Max
75
-
-
ns
5
-
-
ns
2
-
-
ns
12
-
-
ns
30
-
-
ns
0
-
-
ns
0
-
-
ns
0
-
-
ns
0
-
-
ns
30
-
-
ns
30
-
-
ns
45
-
-
ns
0
-
-
ns
-
80
-
μs
-
250
-
μs
-
716.8
-
μs
-
80
-
μs
-
0.7
-
μs
-
358.4
-
μs
-
0.6
-
sec
-
7
-
ms
500
-
-
ns
1
-
-
μs
NOTE :
1) Not 100% tested.
2) Internal programming algorithm is optimized for Buffer Program, so Normal word programming or Single word Buffer Program use Buffer Program algorithm.
3) Internal programming algorithm for supporting Accelerated mode uses a method to double the number of words programmed simultaneously.
4) Typical 512-word Buffer Program time pays due regard to that Each program data pattern ("11", "10". "01", "00") has a same portion in 512-word Buffer.
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