K5N1229ACD-BQ12 Datasheet, PDF (48/128 Pages) Samsung semiconductor – 512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash

datasheet K5N1229ACD-BQ12
Rev. 1.0
MCP Memory
Case 1 : Start from "16N" address group
14th rising edge CLK
CR setting : A14=1, A13=0, A12=1, A11=0
A16-A24
Aa
A/DQ0:
A/DQ15
CLK
AVD
CE
OE
RDY
Aa
00
0B
0C
0D
0E
0F
10
11
12
0B
0C
0D
0E
0F
10
11
12
13
No Additional Cycle for First Word Boundary
tOER
tCEZ
tOEZ
NOTE :
1) Address boundary occurs every 16 words beginning at address 000000FH , 000001FH , 000002FH , etc.
2) Address 000000H is also a boundary crossing.
3) No additional clock cycles are needed except for 1st boundary crossing.
Figure 19. Crossing of first word boundary in burst read mode.
Case 2 : Start from "16N+3" address group
14th rising edge CLK
CR setting : A14=1, A13=0, A12=1, A11=0
A16-A24
Aa
A/DQ0:
Aa
A/DQ15
CLK
00
AVD
CE
OE
RDY
0D
0E
0F
10
11
12
13
0D
0E
0F
10
11
12
13
14
Additional 1 Cycle for First Word Boundary
tCEZ
tOER
tOEZ
NOTE :
1) Address boundary occurs every 16 words beginning at address 000000FH , 000001FH , 000002FH , etc.
2) Address 000000H is also a boundary crossing.
3) No additional clock cycles are needed except for 1st boundary crossing.
Figure 20. Crossing of first word boundary in burst read mode.
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