K5N1229ACD-BQ12 Datasheet, PDF (46/128 Pages) Samsung semiconductor – 512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash

datasheet K5N1229ACD-BQ12
SWITCHING WAVEFORMS
Read While Write Operations
Last Cycle in
Program or
Block Erase
Command Sequence
tWC
CE
Read status in same bank
and/or array data from other bank
tRC
tRC
Rev. 1.0
MCP Memory
Begin another
Program or Erase
Command Sequences
tWC
OE
WE
A/DQ0:
A/DQ15
A16-A24
tOE
tOEH
tWPH
tWP
tDS
PA/BA PD/30h
PA/BA
tAA
tDH
RA
tSR/W
RA
tOEH
RD
RA
RA
tGHWL
RD
555h AAh
tAS
AVD
tAH
Figure 18. Read While Write Operation
NOTE :
Breakpoints in waveforms indicate that system may alternately read array data from the “non-busy bank” and checking the status of the program or erase operation in the “busy”
bank.
- 46 -