K5N1229ACD-BQ12 Datasheet, PDF (36/128 Pages) Samsung semiconductor – 512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash

datasheet K5N1229ACD-BQ12
Rev. 1.0
MCP Memory
13.2 Asynchronous Read
Parameter
Access Time from CE Low
Asynchronous Access Time
AVD Low time
Address Setup Time to rising Edge of AVD
Address Hold Time from Rising Edge of AVD
Output Enable to Output Valid
Output Enable
Hold Time
Read
Toggle and Data Polling
Output Disable to High Z*
NOTE: Not 100% tested.
SWITCHING WAVEFORMS
Asynchronous Mode Read (tCE)
CE
OE
WE
A/DQ0:
A/DQ15
tOEH
tOE
tCE
VA
Symbol
t_CE
t_AA
t_AVDP
t_AAVDS
t_AAVDH
t_OE
t_OEH
t_OEZ
All speed
Unit
Min
Max
-
100
ns
-
100
ns
12
-
ns
5
-
ns
2
-
ns
-
15
ns
0
-
ns
10
-
ns
-
9
ns
tOEZ
Valid RD
A16-A24
VA
tAAVDS
tAAVDH
AVD
RDY ^Hi-Z
tAVDP
Figure 9. Asynchronous Mode Read (tCE)
NOTE : VA=Valid Read Address, RD=Read Data.
Asynchronous mode may not support read following four sequential invalid read condition within 200ns.
Hi-Z
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