K5N1229ACD-BQ12 Datasheet, PDF (40/128 Pages) Samsung semiconductor – 512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash

datasheet K5N1229ACD-BQ12
Rev. 1.0
MCP Memory
13.5 Erase/Program Performance
Parameter
Block Erase Time
64 Kword
16 Kword
Chip Erase Time (3)
Accelerated Block Erase Time
64 Kword
16 Kword
Accelerated Chip Erase Time (3)
Word Programming Time
512-word Buffer Programming Time
Accelerated Word Programming Time
Accelerated 512-word Buffer Programming Time
Chip Buffer Programming Time
Accelerated Buffer Chip Programming Time
Blank check time
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Limits
Typ.
0.6
0.3
307.8
0.4
0.2
205.2
80
1.4
80
0.7
46.9
23.4
7
Max.
3.0
1.5
1539
3.0
1.5
1026
550
7
550
3.5
234.5
117
-
Unit
Comments
sec
Includes 00h programming
prior to erasure
μs / word
Excludes system level over-
head
sec
milli sec
NOTE :
1)25°C, VCC = 1.8V, 100,000 cycles, typical pattern.
2) System-level overhead is defined as the time required to execute the two or four bus cycle command necessary to program each word.
3) Chip Erase time & Accel. Chip Erase time for boot block part
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