K5N1229ACD-BQ12 Datasheet, PDF (30/128 Pages) Samsung semiconductor – 512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash

datasheet K5N1229ACD-BQ12
Rev. 1.0
MCP Memory
8.0 RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Supply Voltage
Symbol
Min
VCC
1.7
VSS
0
NOTE : Voltage reference to GND
1) Data retention is not guaranteed on Operating condition Extended temperature(-25’C~85’C) over.
Typ.
1.8
0
Max
1.95
0
Unit
V
V
9.0 DC CHARACTERISTICS
Parameter
Input Leakage Current
VPP Leakage Current
Output Leakage Current
Active Burst Read Current
Active Asynchronous
Read Current
Active Write Current ²⁾
Read While Write Current
Accelerated Program Current
Standby Current
Standby Current During Reset
Automatic Sleep Mode ³⁾
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Voltage for Accelerated Program
Low VCC Lock-out Voltage
Vpp current in program/erase
Symbol
I_LI
I_LIP
I_LO
I_CCB1
Test Conditions
V_IN=V_SS to V_CC, V_CC=V_CCmax
V_CC=V_CCmax , V_PP=V_CCmax
V_CC=V_CCmax , V_PP=9.5V
V_OUT=V_SS to V_CC, V_CC=V_CCmax, OE=V_IH
CE=V_IL, OE=V_IH (@133MHz)
Min
Typ
Max
Unit
- 1.0
-
+ 1.0
μA
- 1.0
-
+ 1.0
μA
-
-
35
μA
- 1.0
-
+ 1.0
μA
-
35
55
mA
I_CC1 CE=V_IL, OE=V_IH
10MHz
-
35
55
mA
I_CC2
I_CC3
I_CC4
I_CC5
I_CC6
I_CC7
V_IL
V_IH
V_OL
V_OH
V_ID
V_LKO
I_vpp
CE=V_IL, OE=V_IH, WE=V_IL, V_PP=V_IH
CE=V_IL, OE=V_IH
CE=V_IL, OE=V_IH , V_PP=9.5V
CE= RESET=VCC ± 0.2V
RESET = V_SS ± 0.2V
CE=V_SS ± 0.2V, Other Pins=V_IL or V_IH
V_IL = V_SS ± 0.2V, V_IH = V_CC ± 0.2V
I_OL = 100 μA , V_CC=V_CCmin
I_OH = -100 μA , V_CC=V_CCmin
V_PP = 9.5V
V_PP = 1.95V
-
25
40
mA
-
45
70
mA
-
20
30
mA
-
30
120
μA
-
30
120
μA
-
30
120
μA
-0.5
-
0.4
V
V_CC-0.4
-
V_CC+0.4
V
-
-
0.1
V
V_CC-0.1
-
-
V
8.5
9.0
9.5
V
-
-
1.4
V
-
0.8
5
mA
-
-
50
μA
NOTE :
1) Maximum ICC specifications are tested with V_CC = V_CCmax.
2) I_CC active while Internal Erase or Internal Program is in progress.
3) Device enters automatic sleep mode when addresses are stable for t_AA + 60ns.
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