K5N1229ACD-BQ12 Datasheet, PDF (35/128 Pages) Samsung semiconductor – 512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash

datasheet K5N1229ACD-BQ12
Rev. 1.0
MCP Memory
SWITCHING WAVEFORMS
13 cycles for initial access shown.
CR setting : A14=1, A13=0, A12=0, A11=1
tCES
7.5ns typ(133MHz).
tCEZ
CE
CLK
1
2
3
4
5
11 12 13
AVD
A16-A24
A/DQ0:
A/DQ15
tAVDS
tAVDS
tAVDO
tAVDH
tACS
Aa
tACH
Aa
OE
tRDY
RDY
Hi-Z
tOER
tBDH
tBA
Hi-Z
tIAA
D7 D8 D9 D10
D15 D0 ^D6
tOEZ
tRDYS
tRDYA
Hi-Z
Figure 8. 16 word Linear Burst Mode with Wrap Around (133Mhz)
NOTE: In order to avoid a bus conflict the OE signal is enabled on the next rising edge after AVD is going high.
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