K5N1229ACD-BQ12 Datasheet, PDF (31/128 Pages) Samsung semiconductor – 512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash

datasheet K5N1229ACD-BQ12
Rev. 1.0
MCP Memory
10.0 VCC POWER-UP
Parameter
Vcc Setup Time
Time between RESET (high) and CE (low)
NOTE : Not 100% tested.
SWITCHING WAVEFORMS
Vcc/Vccq
RESET
CE
Symbol
t_VCS
t_RH
All Speed Options
Min
Max
200
-
200
-
tVCS
tVCCmin
VIH
tRH
Unit
μs
ns
Figure 3. Vcc Power-up Diagram
11.0 CAPACITANCE(TA = 25 °C, VCC = 1.8V, f = 1.0MHz)
Item
Input Capacitance
Output Capacitance
Control Pin Capacitance
Symbol
Test Condition
Min
C_IN
V_IN=0V
-
C_OUT
V_OUT=0V
-
C_IN2
V_IN=0V
-
Max
10
10
10
Unit
pF
pF
pF
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