K5N1229ACD-BQ12 Datasheet, PDF (44/128 Pages) Samsung semiconductor – 512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash

datasheet K5N1229ACD-BQ12
SWITCHING WAVEFORMS
Unlock Bypass Program Operations(Accelerated Program)
CE
AVD
Rev. 1.0
MCP Memory
WE
A16:A24
A/DQ0:
A/DQ15
Don’t Care
A0h
OE
VID
VPP
VIL or VIH
tVPP
tVPS
Unlock Bypass Block Erase Operations
CE
AVD
PA
PA
PD
Don’t Care
WE
A16:A24
A/DQ0:
A/DQ15
Don’t Care
80h
BA
555h for
chip erase
BA
10h for
chip erase
30h
Don’t Care
OE
tVPS
VID
VPP
tVPP
VIL or VIH
NOTE :
1) VPP can be left high for subsequent programming pulses.
2) Use setup and hold times from conventional program operations.
3) Conventional Program/Erase commands as well as Unlock Bypass Program/Erase commands can be used when the VID is applied to Vpp.
Figure 15. Unlock Bypass Operation Timings
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