K5N1229ACD-BQ12 Datasheet, PDF (15/128 Pages) Samsung semiconductor – 512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash

datasheet K5N1229ACD-BQ12
Rev. 1.0
MCP Memory
3.0 COMMAND DEFINITIONS
The device operates by selecting and executing its operational modes. Each operational mode has its own command set. In order to select a certain
mode, a proper command with specific address and data sequences must be written into the command register. Writing incorrect information which
include address and data or writing an improper command will reset the device to the read mode. The defined valid register command sequences are
stated in Table 8.
[Table 7] Command Sequences
Command Definitions
Cycle 1st Cycle 2nd Cycle 3rd Cycle 4th Cycle 5th Cycle 6th Cycle
Asynchronous Read
Add
RA
1
Data
RD
Reset^5),20)
Add
XXXH
1
Data
F0H
Autoselect
Manufacturer ID⁶⁾
Add
555H
2AAH (DA)555H (DA)X00H
4
Data
AAH
55H
90H
ECH
Autoselect
Device ID⁶⁾
Add
555H
2AAH (DA)555H (DA)X01H
4
Data
AAH
55H
90H
NOTE6
Autoselect
Block Protection Verify⁷⁾
Add
555H
2AAH (BA)555H (BA)X02H
4
Data
AAH
55H
90H
00H / 01H
Autoselect
Handshaking ^{6), 8)}
Add
555H
2AAH (DA)555H (DA)X03H
4
Data
AAH
55H
90H
0H/1H
Program
Add
555H
2AAH
555H
PA
4
Data
AAH
55H
A0H
PD
Unlock Bypass
Add
555H
2AAH
555H
3
Data
AAH
55H
20H
Unlock Bypass Program ⁹⁾
Add
XXX
PA
2
Data
A0H
PD
Unlock Bypass Block Erase⁹⁾
Add
2
Data
XXX
BA
80H
30H
Unlock Bypass Chip Erase⁹⁾
Add
XXXH
XXXH
2
Data
80H
10H
Unlock Bypass Reset
Add
XXXH
XXXH
2
Data
90H
00H
Chip Erase
Add
555H
2AAH
555H
555H
2AAH
555H
6
Data
AAH
55H
80H
AAH
55H
10H
Block Erase
Add
555H
2AAH
555H
555H
2AAH
BA
6
Data
AAH
55H
80H
AAH
55H
30H
Erase Suspend ¹⁰⁾
Add
Data
(DA)XXXH
1
B0H
Erase Resume¹¹⁾
Add
Data
(DA)XXXH
1
30H
Program Suspend ¹²⁾
Add
Data
(DA)XXXH
1
B0H
Program Resume ¹¹⁾
Add
Data
(DA)XXXH
1
30H
Block Protection/Unprotection ¹³⁾
Add
3
Data
XXX
XXX
ABP
60H
60H
60H
CFI Query ¹⁴⁾
Add
Data
(DA)X55H
1
98H
Blank check
Add
555H
2AAH
BA
4
Data
AAH
55H
BCH
BA
D0H
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