MC9S08RG60 Datasheet, PDF (45/232 Pages) Motorola, Inc – Microcontrollers

SoC Guide — MC9S08RG60/D Rev 1.10
4.4.4 Burst Program Execution
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the FLASH
array does not need to be disabled between program operations. Ordinarily, when a program or erase
command is issued, an internal charge pump associated with the FLASH memory must be enabled to
supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When
a burst program command is issued, the charge pump is enabled and remains enabled after completion of
the burst program operation if the following two conditions are met:
• The new burst program command has been queued before the current program operation completes.
• The next sequential address selects a byte on the same physical row as the current byte being
programmed. A row of FLASH memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. In the case where the next sequential address is
the beginning of a new row, the program time for that byte will be the standard time instead of the burst
time. This is because the high voltage to the array must be disabled and then enabled again. If a new burst
command has not been queued before the current command completes, then the charge pump will be
disabled and high voltage removed from the array.
Freescale Semiconductor
MC9S08RC/RD/RE/RG
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