MC9S08RG60 Datasheet, PDF (221/232 Pages) Motorola, Inc – Microcontrollers

C.10 FLASH Specifications
SoC Guide — MC9S08RG60/D Rev 1.10
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see the Memory section.
Table C-12 FLASH Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase
V_prog/erase
2.05
3.6
V
Supply voltage for read operation
0 < f_Bus < 8 MHz
V_Read
1.8
3.6
V
Internal FCLK frequency⁽¹⁾
f_FCLK
150
200
kHz
Internal FCLK period (1/FCLK)
t_Fcyc
5
6.67
µs
Byte program time (random location)⁽²⁾
t_prog
9
t_Fcyc
Byte program time (burst mode)⁽²⁾
t_Burst
4
t_Fcyc
Page erase time⁽²⁾
t_Page
4000
t_Fcyc
Mass erase time⁽²⁾
t_Mass
20,000
t_Fcyc
Program/erase endurance⁽³⁾
T_L to T_H = –40°C to + 85°C
T = 25°C
10,000
—
100,000
—
cycles
Data retention⁽⁴⁾
t_{D_ret}
15
100
—
years
NOTES:
1. The frequency of this clock is controlled by a software setting.
2. These values are hardware state machine controlled. User code does not need to count cycles. This
information supplied for calculating approximate time to program and erase.
3. Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional
information on how Freescale Semiconductor defines typical endurance, please refer to Engineering
Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
4. Typical data retention values are based on intrinsic capability of the technology measured at high
temperature and de-rated to 25°C using the Arrhenius equation. For additional information on how
Freescale Semiconductor defines typical data retention, please refer to Engineering Bulletin EB618/D,
Typical Data Retention for Nonvolatile Memory.
Freescale Semiconductor
MC9S08RC/RD/RE/RG
221