MC9S08RG60 Datasheet, PDF (209/232 Pages) Motorola, Inc – Microcontrollers

SoC Guide — MC9S08RG60/D Rev 1.10
C.4 Electrostatic Discharge (ESD) Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. All ESD testing is in conformity with CDF-AEC-Q00 Stress
Test Qualification for Automotive Grade Integrated Circuits. (http://www.aecouncil.com/) A device is
considered to have failed if, after exposure to ESD pulses, the device no longer meets the device
specification requirements. Complete dc parametric and functional testing is performed per the applicable
device data sheet at room temperature followed by hot temperature, unless specified otherwise in the
device data sheet.
Table C-3 ESD Protection Characteristics
Parameter
ESD Target for Machine Model (MM)
MM circuit description
ESD Target for Human Body Model (HBM)
HBM circuit description
Symbol
V_THMM
V_THHBM
Value
200
2000
Unit
V
V
C.5 DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Table C-4 DC Characteristics (Temperature Range = 0 to 70°C Ambient)
Parameter
Symbol
Min
Typical
Max
Unit
Low-voltage detection threshold
Power on reset (POR) voltage
Maximum low-voltage safe state re-arm⁽¹⁾
V_LVD
V_POR
V_REARM
1.82
0.8
1.90
1.875
0.9
2.24
1.90
V
1.0
V
2.60
V
NOTES:
1. If SAFE bit is set, V_DD must be above re-arm voltage to allow MCU to accept interrupts, refer to 5.6 Low-Voltage Detect
(LVD) System.
Table C-5 DC Characteristics (Temperature Range = –40 to 85°C Ambient)
Parameter
Supply voltage (run, wait and stop modes.)
0 < f_Bus < 8 MHz
Minimum RAM retention supply voltage applied to V_DD
Low-voltage detection threshold
(V_DD falling)
(V_DD rising)
Symbol
Min
Typical
V_DD
V_RAM
1.8
V_POR(1), ⁽²⁾
V_LVD
1.82
1.92
1.88
1.96
Max
3.6
—
1.93
2.01
Unit
V
V
V
Freescale Semiconductor
MC9S08RC/RD/RE/RG
209